Beiyi Semiconductor's SiC business progress

In 2018, Beiyi Semiconductor established a SiC chip development project team and began research and planning of SiC diodes and MOSFET chips. In 2019, the company successfully produced 1200V 20A SiC JBS diodes and passed the industrial-grade reliability assessment. In 2021, the company's 1200V SiC JBS diodes and MOSFET discrete devices received batch orders in the power supply field. In 2022, Beiyi Semiconductor completed the development of 1200V-grade SiC MPS chips, and the surge current reached 12 times the rated current. In addition, the company's 750V and 1200V-grade IGBTs and SiC modules for new energy vehicles also received small batch orders. In 2023, Beiyi Semiconductor completed the design of 650V and 1200V trench gate SiC MOSFET chips.