STMicroelectronics and Sanan cooperate to build an 8-inch silicon carbide (SiC) substrate factory in Chongqing

The 8-inch silicon carbide (SiC) substrate factory jointly established by STMicroelectronics (STM) and Sanan Optoelectronics Co., Ltd. in Chongqing has started production two months ahead of schedule. This factory is an important investment in China's electric vehicle supply chain, integrating the research and development and manufacturing of automotive-grade SiC substrates, epitaxy and chips. The total investment of Sanan ST's silicon carbide project is about 30 billion yuan, and the annual revenue is expected to reach 17 billion yuan. The Chongqing factory will become a major supplier of SiC substrates for China's booming electric vehicle market, with an annual production capacity of 480,000 8-inch SiC substrates and automotive-grade MOSFET power chips.