Tianke Heda expands silicon carbide substrate industrialization base

Tianke Heda announced that its third-generation semiconductor silicon carbide substrate industrialization base in Beijing will carry out the second phase of the project construction. The base is located in Daxing District, Beijing, and is expected to cover a total area of ​​52,790.032 square meters and a total construction area of ​​105,913.29 square meters. The project will include new production plants, chemical warehouses, hazardous waste warehouses, general solid waste warehouses, comprehensive buildings, and guardhouses and other facilities. In addition, the company will purchase new process equipment, including crystal growth and accessories, crystal processing, wafer processing and other equipment, and plans to establish a 6-8 inch silicon carbide substrate production line and R&D center. After the project is completed, it is expected to produce approximately 371,000 conductive silicon carbide substrates per year, including 236,000 6-inch conductive silicon carbide substrates and 135,000 8-inch conductive silicon carbide substrates.