Tianyue Advanced plans to raise 300 million yuan for the 8-inch automotive-grade silicon carbide substrate technology improvement project

Tianyue Advanced announced that it will raise 300 million yuan for its 8-inch automotive-grade silicon carbide substrate preparation technology improvement project. The main research and development directions of the project include SiC growth thermal field simulation, SiC single crystal stress control, etc. The total investment of the project is expected to be about 386 million yuan, with a construction period of 24 months. It will be carried out in the existing plant of Shanghai Tianyue. At present, the project has been registered and the environmental impact assessment procedures are being prepared.