Japan's Toyoda Gosei successfully developed a 200mm gallium nitride single crystal wafer

Toyoda Gosei Co., Ltd. of Japan announced that it has successfully developed a 200mm (8-inch) gallium nitride (GaN) single crystal wafer for vertical transistors. This new transistor can provide higher power device density than traditional lateral transistors and can be applied to 200mm and 300mm silicon-based gallium nitride processes. Researchers from Osaka University and Toyoda Gosei successfully grew hexagonal GaN crystals with a diagonal length of slightly less than 200mm on a 200mm multi-point seed (MPS) substrate using the Na-flux process.