Samsung Electronics plans to launch next-generation V-NAND technology

According to Korean media reports, Samsung Electronics plans to launch the next-generation V-NAND technology with more than 400 layers in 2026 and 0a nm DRAM based on the VCT structure in 2027. This new V-NAND technology is called BV (Bonding Vertical) NAND, which will change the existing CoP peripheral upper unit structure. By manufacturing the storage unit and the peripheral circuit separately and then vertically bonding them, it will avoid damage to the peripheral circuit structure during the NAND stacking process and achieve a bit density 60% higher than the CoP solution. In addition, the number of V11 NAND layers in 2027 will be further increased, the I/O rate can be increased by 50%, and it is expected to achieve thousand-layer stacking in the future.